Toshiba and NEC today announced that they have developed a magnetoresistive random access memory (MRAM) that combines the highest density with the fastest read and write speed yet achieved.
The new MRAM achieves a 16-megabit density and a read and write speed of 200-megaBytes a second, and also secures a low voltage operation of 1.8V, according to the companies.
More here at DigiTimes.
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